Chinese scientists have created atom-thick memory

Processor manufacturers typically integrate memory together with computing units, but researchers from Fudan University in Shanghai have developed a new technology that uses a thin layer of 2D NOR memory, reports Tom's Hardware.

The technology called ATOM2CHIP applies a layer of molybdenum disulfide to a silicon chip with 130nm CMOS structures, ensuring a yield of 94.34%.

The chip operates at frequencies up to 5 MHz, consumes 0.644 picojoules per bit, and performs data write and erase operations in 20 nanoseconds. The write endurance exceeds 100,000 cycles, and data retention reaches 10 years. The technology effectively solves the problem of combining heterogeneous surfaces thanks to a "floating" coating that is protected from high temperatures and electrostatic discharges.

The new interface provides direct data exchange between the controller and the coating, supports 32-bit parallelism and random access, making the technology suitable for full memory integration into chips. Mass implementation is expected in a few years.